Specification
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Detection method |
Feedback reflection |
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model |
DC type |
NPN |
NO |
E3F-R2NK |
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NC |
E3F-R2N2 |
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NO+NC |
E3F-R2N12 |
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PNP |
NO |
E3F-R2PK |
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NC |
E3F-R2P2 |
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NO+NC |
E3F-R2P12 |
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Two-wire |
NO |
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NC |
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AC type |
Two-wire |
NO |
E3F-R2Y1 |
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NC |
E3F-R2Y2 |
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Three-wire |
NO+NC |
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examination range |
2m ± 10% |
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Detection range adjustment |
Adjustable |
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Detection target |
Opaque object |
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Response time |
50ms |
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On delay |
1.5ms |
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light source |
Infrared light 660nm |
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voltage |
DC type: DC12-24V (6-36V) pulsation (P-P) below 10%, |
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Withstand voltage |
AC1000V 50/60Hz 1min between the charging part and the outer casing |
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Voltage effect |
Rated power supply voltage range within ±15%, rated power supply voltage value, ±10% detection distance |
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Current consumption |
N.P type: 20mA or less, type A: 1.7mA or less |
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Control output |
N.P type: 300 mA or less, A type: 400 mA or less, J type: 2 A or less (contact life: 100,000 times) |
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Loop protection |
N.P.D type: reverse connection protection, surge absorption, load short circuit protection, type A: surge absorption |
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Ambient temperature and humidity |
During operation and storage: each -30-+65 °C (no ice, no condensation), During operation and storage: 35-95% RH each |
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Temperature effect |
Temperature range -30-+65°C, +23°C, ±15% detection distance Temperature range -25 – +60 ° C, +23 ° C, ± 10% detection distance |
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Insulation resistance |
50MΩ or more (DC500 megohmmeter) between the charging part and the outer casing |
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Material |
Housing: ABS detection surface (lens): PMMA |
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Protective structure |
IP65 (IEC specification) |
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